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| AOD413Y P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD413YL is a Green Product ordering option. AOD413Y and AOD413YL are electrically identical. TO-252 D-PAK Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45m (VGS = -10V) RDS(ON) < 69m (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -40 20 -12 -12 -30 -12 30 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W C TA=25C G TA=100C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJL Typ 16.7 40 2.5 Max 25 50 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD413Y Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A Forward Transconductance VDS=-5V, ID=-12A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=-10mA, V GS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A TJ=125C -1 -30 36 56 51 16 -0.75 -1 -12 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 14.1 VGS=-10V, VDS=-20V, ID=-12A 7 2.2 4.1 8 VGS=-10V, VDS=-20V, RL=1.7, RGEN=3 IF=-12A, dI/dt=100A/s IF=-12A, dI/dt=100A/s 12.2 24 12.5 23.2 18.2 45 70 69 -1.9 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: Oct 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD413Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V 20 -ID (A) 15 15 -3.5V 10 VGS=-3V 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 70 65 Normalized On-Resistance 60 RDS(ON) (m) 55 50 45 40 35 30 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 150 135 ID=-12A 120 RDS(ON) (m) 105 90 75 60 45 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C -IS (A) 1.0E-02 1.0E-03 1.0E-01 VGS=-10V VGS=-4.5V 1.60 1.80 VGS=-10V ID=-12A 125C 5 25C -ID(A) -5V -4.5V 25 VDS=-5V 20 -4V ID=-10mA, V GS=0V 10 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.40 VGS=-4.5V ID=-8A 1.20 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 125C Alpha & Omega Semiconductor, Ltd. AOD413Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-12A 1000 8 -VGS (Volts) ID=-10mA, V GS=0V 750 Capacitance (pF) Ciss 6 500 Coss 250 Crss 4 2 0 0 3 6 9 12 15 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 T J(Max)=175C, T A=25C RDS(ON) limited 10s 1ms Power (W) 200 160 T J(Max)=175C T A=25C -ID (Amps) 10.0 120 80 100s 10ms 1.0 DC 40 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZJC.RJC RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD413Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 -ID(A), Peak Avalanche Current 60 12 Power Dissipation (W) LI tD=-10mA, VD =0V IA = GS BV - V DD 50 40 30 20 10 0 10 8 T A=25C 6 0.00001 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 14 12 Current rating -ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Power (W) 60 50 40 30 20 10 0 0.001 T A=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 ZJA Normalized Transient Thermal Resistance 1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=50C/W 0.1 PD Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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